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1 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet general description the az1117 is a series of low dropout three-terminal regulators with a dropout of 1.15v at 1a output cur- rent. the az1117 series provides current limiting and ther- mal shutdown. its circuit includes a trimmed bandgap reference to assure out put voltage accuracy to be within 1% for 1.5v, 1.8v, 2.5v, 2.85v, 3.3v, 5.0v and adjustable versions or 2% for 1.2v version. current limit is trimmed to ensure specified output current and controlled short-circuit current. on-chip thermal shut- down provides protection against any combination of overload and ambient temperature that would create excessive junction temperature. the az1117 has an adjustable version, that can pro- vide the output voltage from 1.25v to 12v with only 2 external resistors. the az1117 series is available in the industry standard sot-223, sot-89, to-220-3, to-252-2 (1), to-252-2 (2), to-252-2 (3), to-252-2 (4) and to-263-3 power packages. features low dropout voltage: 1.15v at 1a output cur- rent trimmed current limit on-chip thermal shutdown three-terminal adjustable or fixed 1.2v, 1.5v, 1.8v, 2.5v, 2.85v, 3.3v, 5.0v operation junction temperature: -40 to 125 o c applications pc motherboard lcd monitor graphic card dvd-video player nic/switch telecom equipment adsl modem printer and other peripheral equipment sot-223 to-220-3 to-252-2 (1) figure 1. package types of az1117 sot-89 to-263-3 to-252-2 (3) to-252-2 (2) to-252-2 (4)
2 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet pin configuration figure 2. pin configuration of az1117 h package (sot-223) t package (to-220-3) (to-252-2 (1)) r package s package (to-263-3) d package (sot-89) vout input output adj/gnd 1 2 3 vout input output adj/gnd 1 2 3 1 2 3 input output adj/gnd vout 1 2 3 input output adj/gnd vout 1 2 3 input output adj/gnd vout input output adj/gnd vout 1 2 3 (to-252-2 (3)) 1 2 3 input output adj/ gnd vout (to-252-2 (2)) (to-252-2 (4)) input output adj/gnd vout 1 2 3
3 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet functional block diagram figure 3. functional block diagram of az1117 thermal protection + - for adjustable output, disconnect a1 and a2, connect b input output adj/gnd a1 a2 b for fixed output, connect a1 and a2, disconnect b 1 2 3
4 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet circuit type package adj: adjustable output 1.5: fixed output 1.5v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 3.3: fixed output 3.3v 5.0: fixed output 5.0v e1: lead free az1117 - tr: tape and reel blank: tube package temperature range part number marking id packing type lead free lead free sot-223 -40 to 125 o c az1117h-adjtre1 eh11a tape & reel az1117h-1.2tre1 eh18a tape & reel az1117h-1.5tre1 eh12a tape & reel az1117h-1.8tre1 eh13a tape & reel az1117h-2.5tre1 eh14a tape & reel az1117h-2.85tre1 eh15a tape & reel az1117h-3.3tre1 eh16a tape & reel az1117h-5.0tre1 eh17a tape & reel sot-89 -40 to 125 o c az1117r-adjtre1 e17a tape & reel az1117r-1.2tre1 e17g tape & reel az1117r-1.5tre1 e17b tape & reel az1117r-1.8tre1 e17c tape & reel az1117r-2.5tre1 e17d tape & reel az1117r-2.85tre1 e17h tape & reel az1117r-3.3tre1 e17e tape & reel az1117r-5.0tre1 e17f tape & reel to-220-3 -40 to 125 o c az1117t-adje1 az1117t-adje1 tube az1117t-1.2e1 az1117t-1.2e1 tube az1117t-1.5e1 az1117t-1.5e1 tube az1117t-1.8e1 az1117t-1.8e1 tube az1117t-2.5e1 az1117t-2.5e1 tube az1117t-2.85e1 az1117t-2.85e1 tube az1117t-3.3e1 az1117t-3.3e1 tube az1117t-5.0e1 az1117t-5.0e1 tube 1.2: fixed output 1.2v 2.85: fixed output 2.85v ordering information r: sot-89 d: to-252-2 (1) h: sot-223 t: to-220-3 s: to-263-3 /to-252-2 (2) /to-252-2 (3) /to-252-2 (4)
5 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet package temperature range part nu mber marking id packing type to-252-2 (1)/ to-252-2 (2)/ to-252-2 (3)/ to-252-2 (4) -40 to 125 o c az1117d-adje1 az1117d-adje1 tube az1117d-adjtre1 az1117d-adje1 tape & reel az1117d-1.2e1 az1117d-1.2e1 tube az1117d-1.2tre1 az1117d-1.2e1 tape & reel az1117d-1.5e1 az1117d-1.5e1 tube az1117d-1.5tre1 az1117d-1.5e1 tape & reel az1117d-1.8e1 az1117d-1.8e1 tube az1117d-1.8tre1 az1117d-1.8e1 tape & reel az1117d-2.5e1 az1117d-2.5e1 tube az1117d-2.5tre1 az1117d-2.5e1 tape & reel az1117d-2.85e1 az1117d-2.85e1 tube az1117d-2.85tre1 az1117d-2.85e1 tape & reel az1117d-3.3e1 az1117d-3.3e1 tube az1117d-3.3tre1 az1117d-3.3e1 tape & reel az1117d-5.0e1 az1117d-5.0e1 tube az1117d-5.0tre1 az1117d-5.0e1 tape & reel to-263-3 -40 to 125 o c az1117s-adje1 az1117s-adje1 tube az1117s-adjtre1 az1117s-adje1 tape & reel az1117s-1.2e1 az1117s-1.2e1 tube az1117s-1.2tre1 az1117s-1.2e1 tape & reel az1117s-1.5e1 az1117s-1.5e1 tube az1117s-1.5tre1 az1117s-1.5e1 tape & reel az1117s-1.8e1 az1117s-1.8e1 tube az1117s-1.8tre1 az1117s-1.8e1 tape & reel az1117s-2.5e1 az1117s-2.5e1 tube az1117s-2.5tre1 az1117s-2.5e1 tape & reel az1117s-2.85e1 az1117s-2.85e1 tube az1117s-2.85tre1 az1117s-2.85e1 tape & reel az1117s-3.3e1 az1117s-3.3e1 tube az1117s-3.3tre1 az1117s-3.3e1 tape & reel az1117s-5.0e1 az1117s-5.0e1 tube az1117s-5.0tre1 az1117s-5.0e1 tape & reel ordering information (continued) bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant.
6 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operatio n of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings" for extended periods ma y affect device reliability. note 2: absolute maximum ratings indicate limits beyond which damage to the component may occur. electrical specifications do not apply when operating the device outside of its operating ratings. the maximum allowable power dissipation is a function of the maximum junction temperature, t j(max), the junction-to-ambient thermal resistance, ja, and the ambient temperature, t a. the maximum allowable power di ssipation at any ambient tem- perature is calculated using: p d(max) =(t j(max) -t a )/ ja. exceeding the maximum allowa ble power dissipation will result in excessive die temperature, and th e regulator will go into thermal shutdown. recommended operating conditions parameter symbol value unit input voltage v in 20 v operating junction temperature t j 150 o c storage temperature t s -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance (n o heatsink, note 2) ja sot-223 120 o c/w sot-89 165 to-220-3 60 to-252-2 (1)/to-252-2 (2)/ to-252-2 (3)/to-252-2 (4) 100 to-263-3 60 esd (human body model) esd 2000 v esd (machine model) esd 250 v parameter symbol min max unit input voltage v in 15 v operating junction temperature range t j -40 125 o c absolute maximum ratings (note 1)
7 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit reference voltage v ref i out = 10 m , v in -v out = 2v 10ma i out 1 , 1.4v v in -v out 8v, p maximum power dissipation 1.238 1.225 1.250 1.250 1.262 1.270 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 0.035 0.2 % load regulation ? v out v in -v out =2v, 10ma i out 1 0.2 0.4 % dropout voltage v drop ? v ref =1% , i out =0.1 1.00 1.1 v ? v ref =1% , i out =0.5 1.08 1.18 v ? v ref =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a adjust pin current i adj 60 120 a adjust pin current change ? i adj 1.4v v in -v out 10v, 10ma i out 1a 0.2 5 a minimum load current (adj) i load (min) 1.5v v in -v out 10v (adj only) 1.7 5 ma quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f=120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. electrical characteristics az1117-adj electrical characteristics
8 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 m , v in =3.2v 10ma i out 1a, 3.0v v in 10v 1.176 1.152 1.2 1.2 1.224 1.248 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 6 mv load regulation ? v out v in -v out =2v, 10ma i out 1 1 10 mv dropout voltage v drop ? v out =1% , i out =0.1 1.00 1.1 v ? v out =1% , i out =0.5 1.08 1.18 v ? v out =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f =120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. az1117-1.2 electrical characteristics electrical characteristics (continued)
9 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 m , v in =3.5v 10ma i out 1a, 3.0v v in 10v 1.485 1.470 1.5 1.5 1.515 1.530 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 6 mv load regulation ? v out v in -v out =2v, 10ma i out 1 1 10 mv dropout voltage v drop ? v out =1% , i out =0.1 1.00 1.1 v ? v out =1% , i out =0.5 1.08 1.18 v ? v out =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f=120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. az1117-1.5 electrical characteristics electrical characteristics (continued)
10 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 m , v in =3.8v 10ma i out 1a, 3.2v v in 10v 1.782 1.746 1.8 1.8 1.818 1.854 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 6 mv load regulation ? v out v in -v out =2v, 10ma i out 1 1 10 mv dropout voltage v drop ? v out =1% , i out =0.1 1.00 1.1 v ? v out =1% , i out =0.5 1.08 1.18 v ? v out =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f =120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. az1117-1.8 electrical characteristics electrical characteristics (continued)
11 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 m , v in =4.5v 10ma i out 1a, 3.9v v in 10v 2.475 2.450 2.5 2.5 2.525 2.550 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 6 mv load regulation ? v out v in -v out = 2v, 10ma i out 1 1 10 mv dropout voltage v drop ? v out =1% , i out =0.1 1.00 1.1 v ? v out =1% , i out =0.5 1.08 1.18 v ? v out =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f =120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. az1117-2.5 electrical characteristics electrical characteristics (continued)
12 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 ma , v in =4.85v 10ma i out 1a, 4.25v v in 10v 2.822 2.793 2.85 2.85 2.878 2.907 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 6 mv load regulation ? v out v in -v out =2v, 10ma i out 1 1 10 mv dropout voltage v drop ? v ref =1% , i out = 0.1a 1.00 1.1 v ? v ref =1% , i out = 0.5a 1.08 1.18 v ? v ref =1% , i out = 1.0a 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f =120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 az1117-2.85 electrical characteristics operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. electrical characteristics (continued)
13 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 m , v in =5.0v 10ma i out 1a, 4.75v v in 10v 3.267 3.235 3.3 3.3 3.333 3.365 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 6 mv load regulation ? v out v in -v out =2v, 10ma i out 1 1 10 mv dropout voltage v drop ? v out =1% , i out =0.1 1.00 1.1 v ? v out =1% , i out =0.5 1.08 1.18 v ? v out =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f=120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 1 0khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. az1117-3.3 electrical characteristics electrical characteristics (continued)
14 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet parameter symbol conditions min typ max unit output voltage v out i out =10 m , v in =7.0v 10ma i out 1a, 6.5v v in 12v 4.950 4.900 5.0 5.0 5.050 5.100 v line regulation ? v out i out =10ma, 1.5v v in -v out 10 v 1 10 mv load regulation ? v out v in -v out =2v, 10ma i out 1 1 15 mv dropout voltage v drop ? v out =1% , i out =0.1 1.00 1.1 v ? v out =1% , i out =0.5 1.08 1.18 v ? v out =1% , i out =1.0 1.15 1.25 v current limit i limit v in -v out =2v 1.25 1.35 a quiescent current i q v in =v out +1.25v 5 10 ma ripple rejection psrr f =120hz, c out =22 f tantalum, v in -v out =3v, i out =1a 60 75 db temperature stability 0.5 % long-term stability t a =125 o c, 1000hrs 0.3 % rms output noise (% of v out ) t a =25 o c, 10hz f 10khz 0.003 % thermal shutdown junction temperature 150 o c thermal shutdown hysteresis 25 o c thermal resistance jc sot-223 25 o c/w sot-89 30 to-220-3 10 to-252-2 (1)/to-252-2 (2) /to-252-2 (3)/to-252-2 (4) 17 to-263-3 10 operating conditions: v in 1 0v, t j =25 o c, unless otherwise specified. az1117-5.0 electrical characteristics electrical characteristics (continued)
15 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet typical performance characteristics figure 6. load regulation vs. junction temperature figure 7. reference voltage vs. junction temperature -50 -25 0 25 50 75 100 125 1.230 1.235 1.240 1.245 1.250 1.255 1.260 1.265 1.270 1.275 1.280 reference voltage (v) junction temperature ( o c) -50 -25 0 25 50 75 100 125 -0.2 -0.1 0.0 0.1 0.2 output voltage deviation (%) junction temperature ( o c) az1117-adj figure 4. dropout voltage vs. output current 0.20.40.60.81.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t a =125 o c t a =25 o c t a =0 o c dropout voltage (v) output current (a) -40-20 0 20406080100120 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 dropout voltage (v) junction temperature ( o c) i out =0.1a i out =0.5a i out =1a ? v ref =1% figure 5. dropout voltage vs. junction temperature
16 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet figure 9. minimum load current vs. junction temperature figure 11. short-circuit current vs. junction temperature typical performance ch aracteristics (continued) figure 10. adjust pin current vs. junction temperature -50 -25 0 25 50 75 100 125 1.0 1.2 1.4 1.6 1.8 2.0 short-circuit current (a) junction temperature ( o c) -50 -25 0 25 50 75 100 125 0 1 2 3 4 5 minimum load current (ma) junction temperature ( o c) -40 -20 0 20 40 60 80 100 120 52 54 56 58 60 62 64 66 adjust pin current ( a) junction temperature ( o c) figure 8. output voltage vs. junction temperature -50 -25 0 25 50 75 100 125 3.10 3.15 3.20 3.25 3.30 3.35 3.40 az1117-3.3 output voltage (v) junction temperature ( o c)
17 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet typical performance ch aracteristics (continued) figure 14. line transient response figure 15. load transient response (conditions: v in =4.8 to 5.8v, v out =3.33v, i out =0.1a, c in =1 f, c out =10 f ) time (20 s/div) -20 0 20 40 4.8 3.8 4.3 5.3 v in (0.5v/div) ? v out (20mv/div) time (10 s/div) (conditions: v in =4.8v, v out =3.33v, i out =0.1 to 0.5a, c in =c out =10 f ) 2.8 3.8 4.8 5.8 0.4 -0.2 0 0.2 i out (0.2a/div) ? v out (1v/div) 5.8 0.1a figure 12. maximum power dissipation 25 50 75 100 125 0.0 2.5 5.0 7.5 10.0 sot-223 power (w) case temperature ( o c) 10 100 1k 10k 100k 20 30 40 50 60 70 ripple rejection (db) frequency (hz) figure 1 3 . ripple rejection vs. frequency
18 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet typical applications figure 16. typical applications of az1117 az1117-adj v in v out adj v in 10 f r1 r2 22 f v out ++ ++ v in =7v az1117-5.0 v in v out gnd 10 f 22 f 5v at 1a v out =v ref * ( 1+r2/r1) + i adj * r2 150 ? 150 ?
19 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimensions sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) 2.900(0.114) 3.100(0.122) 0.610(0.024) 0.810(0.032) 2.300(0.091) typ 6.300(0.248) 6.700(0.264) 1.750(0.069) typ 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 1.500(0.059) 1.700(0.067) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 3 5 0 ( 0 . 0 1 4 ) 0.250(0.010) 0 10 0.900(0.035) min
20 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) sot-89 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
21 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) unit: mm(inch) to-252-2 (1) 1.350(0.053) 1.650(0.065) 0.600(0.024) 0.900(0.035) 4.500(0.177) 4.700(0.185) 3 4 3.800ref(0.150ref) 4.800(0.189) 6.500(0.256) 4.300(0.169) 5.400(0.213) 1.400(0.055) 1.780(0.070) 0.000(0.000) 0.127(0.005) 0.450(0.018) 0.580(0.023) 2.300typ 9.500(0.374) 9.900(0.390) 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 5.200(0.205) 5.400(0.213) 6.450(0.254) 6.650(0.262) 2.550(0.100) 2.900(0.114) 5.450(0.215) 6.250(0.246) 2.200(0.087) 2.400(0.094) 5 5 8 0.450(0.018) 0.580(0.023)
22 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) unit: mm(inch) to-252-2 (2) 6.500(0.256) 6.700(0.264) 5.230(0.206) 5.430(0.214) 1.2 0.1 2.9ref 1.400(0.055) 1.700(0.067) 0 8 0.470(0.019) 0.600(0.024) 3 7 3 7 3 7 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 1 5 4.700ref 5.250ref 0.600(0.024) 1.000(0.039) 1.150(0.045) 1.500(0.059) 6.000(0.236) 6.200(0.244) 0.770(0.030) 0.890(0.035) 2.28bsc 0.770(0.030) 1.100(0.433) 0.900(0.035) 1.250(0.049) 1.80ref
23 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) unit: mm(inch) to-252-2 (3) 1.290.1 2.900ref 1.400(0.055) 1.700(0.067) 0.470(0.019) 0.600(0.024) 5 9 0 8 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 4.700ref 5.250ref 6.500(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236) 6.200(0.244) 0.720(0.028) 0.850(0.033) 2.286(0.090) bsc 0.720(0.028) 0.900(0.035) 0.900(0.035) 1.250(0.049) 1.800ref 8 0 0.600(0.024) 1.000(0.039) 7 3 9 5
24 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) unit: mm(inch) to-252-2 (4) 5.460(0.215) 4.960(0.195) 6.350(0.250) 6.730(0.265) 1.200.05 1.900(0.075) 1.700(0.067) 6.220(0.245) 5.970(0.235) 1.270(0.050) 0.890(0.035) 1.492(0.059) 1.145(0.045) 1.010(0.040) 1.124(0.044) 0.765(0.030) 2.290(0.090) 0.640(0.025) 0.884(0.035) max bsc 10.340(0.407) 9.940(0.391) 0.600(0.024) 0.460(0.018) 2.380(0.094) 2.180(0.086) 4.320(0.170) min min 5.210(0.205) 15 0 3 3 0.780(0.031) 0.650(0.026) 0.884(0.035) 0.640(0.025) 0.460(0.018) 0.610(0.024) 0.410(0.016) 0.560(0.022) detail a 2.160(0.085) min base metal plating section b-b 0.020(0.001) 0.120(0.005) 2.740(0.108) 1.500(0.059) ref 1.780(0.070) 0 10 seating plane gauge plane b b
25 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) to-220-3 unit: mm(inch) 3.560(0. 140) 1 4 . 2 3 0 ( 0 . 5 6 0 ) 1.160(0.046) 0. 813(0.032) 8 . 7 6 3 ( 0 . 3 4 5 ) 2. 540(0.100) 0.356 (0.014) 2.080(0. 082) 3 7 3. 560(0.140) 7 9. 660(0. 380) 0. 550(0. 022) 60 0. 381(0.015) 2 . 5 8 0 ( 0 . 1 0 2 ) 6 0 8 . 5 2 0 ( 0 . 3 3 5 ) 1. 500(0.059) 0.200(0. 008) 1 . 8 5 0 ( 0 . 0 7 3 ) 2. 540(0. 100) 0. 381(0.015) 0.610 (0.024) 3 . 3 8 0 ( 0 . 1 3 3 ) 10. 660(0.420) 4.060(0. 160) 1. 350(0. 053) 2 7 . 8 8 0 ( 1 . 0 9 8 ) 3 0 . 2 8 0 ( 1 . 1 9 2 ) 9 . 5 2 0 ( 0 . 3 7 5 ) 1 6 . 5 1 0 ( 0 . 6 5 0 ) 4. 820(0.190) 2.880(0. 113) 1.760(0.069)
26 jan. 2012 rev. 2. 8 bcd semiconductor manufacturing limited 1a low dropout linear regulator az1117 data sheet mechanical dimens ions (continued) to-263-3 unit: mm(inch) 7 3 7 8 . 6 4 0 ( 0 . 3 4 0 ) 9 . 6 5 0 ( 0 . 3 8 0 ) 0.990(0.039) 0.510(0.020) 2.540(0.100) 1.150(0.045) 9.650(0.380) 3 1 4 . 7 6 0 ( 0 . 5 8 1 ) 8.840(0.348) 2.640(0.104) 0.020(0.001) 8 2 0 6 0.380(0.015) 2 . 3 9 0 ( 0 . 0 9 4 ) 0.360(0.014) 2 . 2 0 0 ( 0 . 0 8 7 ) 7 0 10.290(0.405) 4 . 0 7 0 ( 0 . 1 6 0 ) 4 . 8 2 0 ( 0 . 1 9 0 ) 1.390(0.055) 1.150(0.045) 1.390(0.055) 2.540(0.100) 1.270(0.050) 1.390(0.055) 2 . 6 9 0 ( 0 . 1 0 6 ) 1 5 . 7 4 0 ( 0 . 6 2 0 ) 0.250(0.010) 2.700(0.106) 0.400(0.016) 5 . 6 0 0 ( 0 . 2 2 0 ) 7.420(0.292) 7.980(0.314) 2.540(0.100) 2.540(0.100)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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